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UTC HLB122
NPN EPITAXIAL SILICON TRANSISTOR
NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC HLB122 is a medium power transistor designed for use in switching applications.
FEATURES
* High breakdown voltage * Low collector saturation voltage * Fast switching speed
1
TO-251
1: BASE
2: COLLECTOR
3: EMITTER
*Pb-free plating product number:HLB122L
ABSOLUTE MAXIMUM RATINGS
(Ta=25) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Total Power Dissipation (Tc=25) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICF IB IBP PC TJ TSTG RATINGS 600 400 6 800 1600 100 200 20 150 -40 ~ +150 UNIT V V V mA mA mA mA W
ELECTRICAL CHARACTERISTICS
(Ta=25C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current SYMBOL TEST CONDITIONS BVCBO IC = 100A BVCEO IC = 10mA BVEBO IE = 10A ICBO VCB = 600V ICEO VCB = 400V IEBO VEB = 6V *VCE (sat) 1 IC = 100mA, IB = 20mA C-E Saturation Voltage *VCE (sat) 2 IC = 300mA, IB = 60mA B-E Saturation Voltage *VBE (sat) IC = 100mA, IB = 20mA *hFE1 VCE = 10V, IC = 0.1A DC Current Gain VCE = 10V, IC = 0.5A *hFE2 Fall Time Tf VCC = 100V, IC= 0.3A, IB1= -IB2= 0.06A *Pulse Test : Pulse Width 380s, Duty Cycle 2% MIN 600 400 6 TYP MAX UNIT V V V A A A mV mV V
10 10
10 10 10 400 800 1 40 0.6
S
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R213-014,A
www.unisonic.com.tw
UTC HLB122
CLASSIFICATION OF HFE1
RANK Range B1 10 ~ 17 B2 13 ~ 22
NPN EPITAXIAL SILICON TRANSISTOR
B3 18 ~ 27 B4 23 ~ 32 B5 28 ~ 37 B6 33 ~ 40
CHARACTERISTICS CURVE
100
Current Gain & Collector Current 75
10000
Saturation Voltage & Collector Current
Saturation Voltage (mV)
125 25
1000
75
100
hFE
10
125
25
10
1 1 10
hFE @ VCE = 10V
100 1000
1 1 10
VCE(sat) @ IC = 5IB
100 1000
Collector Current, I C (mA)
10000
Collector Current, I C (mA)
1000
Saturation Voltage & Collector Current VBE(sat) @ IC = 5IB
ON Voltage & Collector Current
ON Voltage, VBE(on) (mV)
Saturation Voltage (mV)
VBE(on) @ VCE = 10V
1000
75 25 125
100 1 10 100 1000
100 1 10 100 1000
Collector Current, IC (mA)
100
Collector Current(mA)
10000
Capacitance & Reverse-Biased Voltage
Safe Operating Area
Capacitance, Cob (pF)
Collector Current (mA)
1000
10
100
P T=1ms PT=100 ms PT=1 s
10
1 0.1
1
10
100
1
1
10
100
1000
Reverse-Biased Voltage (V)
Forward Biased Voltage (V)
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R213-014,A
www.unisonic.com.tw
UTC HLB122
10
NPN EPITAXIAL SILICON TRANSISTOR
Switching Time & Collector Current VCC = 45V, IC = 5IB1 = -5IB2
Switching Time (s)
TSTG
1
Ton Tf
0.1 100 1000
Collector Current (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R213-014,A
www.unisonic.com.tw

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